Title Dr. First Name VANDANA Last Name KUMARI
Designation Assistant Professor
Department Faculty of Technology
Email vandanakumar@fot.du.ac.in
Webpage
Phone.no 9971657377
Employement Info
Employee Type Nature Of Employment
Teaching Permanent
Educational Qualifications
Degree/Certification Name Institution Year of Completion
Ph.D. - Doctorate University of Delhi 2014
PG University of Delhi 2009
UG University of Delhi 2006
Research Publications
Title of Article Type of Publication Name of Journal ISSN Journal Volume Year Link to Article DOI (Digital Object Identifier)
Ground Plane Embedded FD-SOI MOSFET Based UV Sensor: A Performance Enhancement Perspective Research Papers in Scopus Listed Journals Sensing and Imaging 27 2026 10.1007/s11220-026-00768-w
Analysis of Planar Ground Plane JunctionLess Transistor (GP-JLT) for Improved Analog/RF & Dosimeter Applications Research Papers in Scopus Listed Journals Technical Review 43 2026 10.1080/02564602.2026.2641457
RF Performance Augmentation Using DG-InAlN/GaN HEMT Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 71 2024 10.1109/TED.2024.3430251
Exploring Linearity & Radiation Characteristics in Slant Field Plate MISHEMT (SFP-MISHEMT) Research Papers in Scopus Listed Journals Material Science and Engineering B 0921-5107 307 2024 0.1016/j.mseb.2024.117489
Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application Research Papers in Scopus Listed Journals Journal of Computation Electronics 1572-8137 23 2024 10.1007/s10825-024-02216-y
On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 71 2024 10.1109/TED.2024.3396781
On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications Research Papers in Scopus Listed Journals Micro and Nano Structures 2773-0123 182 2023 10.1016/j.micrna.2023.207653
Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT) Research Papers in Scopus Listed Journals Microelectronics Reliability 0026-2714 148 2023 10.1016/j.microrel.2023.115184
Assessing Single Event Upset Susceptibility of InAlN HEMT with Cap Layer under Heavy-ion Environment Research Papers in Scopus Listed Journals Microsyst Technol 1432-1858 2023 10.1007/s00542-024-05723-x
Efficacy of back barrier engineered Π – Gate InAlN/GaN high electron mobility transistors for high-power applications Research Papers in Scopus Listed Journals Journal of Physics D: Applied Physics 0022-3727 56 2023 10.1088/1361-6463/acdf6d
Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 70 2023 10.1109/TED.2023.3262228
Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment Research Papers in Scopus Listed Journals Silicon 1876-9918 15 2023 10.1007/s12633-023-02506-3
Sensitivity Investigation of Planer Ground Plane Junctionless Transistor (GP-JLT) for UVA Photodetector Research Papers in Scopus Listed Journals Sensor 1530-437X 23 2023 10.1109/JSEN.2022.3223513
A Π-shaped p-GaN HEMT for reliable enhancement mode operation Research Papers in Scopus Listed Journals Microelectronics Reliability 0026-2714 133 2022 10.1016/j.microrel.2022.114544
Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment Research Papers in Scopus Listed Journals Microelectronics Journal 0026-2692 122 2022 10.1016/j.mejo.2022.105405
E-mode All-GaN-Integrated Cascode MISHEMT with GaN/InAlGaN/GaN back barrier for high power switching performance: Simulation Study Research Papers in Scopus Listed Journals Superlattices and Microstructures 0026-2692 122 2022 10.1016/j.spmi.2021.107118
Interplay between γ – ray Irradiation and 3DEG for Dosimeter Applications Research Papers in Scopus Listed Journals IEEE Access 2169-3536 10 2022 10.1109/ACCESS.2022.3155764
TCAD investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs Research Papers in Scopus Listed Journals IETE Technical Review 0256-4602 39 2021 10.1080/02564602.2021.1997362
TCAD based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT Research Papers in Scopus Listed Journals IEEE Transactions on Device and Materials Reliability 1530-4388 21 2021 10.1109/TDMR.2021.3103238
TCAD-Based Investigation of Double Gate JunctionLess Transistor for UV Photodetector Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 68 2021 10.1109/TED.2021.3075654
Impact of Non-Uniform Doping on the Reliability of Double Gate JunctionLess Transistor: A Numerical Investigation Research Papers in Scopus Listed Journals IETE Technical Review 0256-4602 32 2021 10.1080/02564602.2021.1912659
TCAD Investigation of Total Ionizing Dose (TID) Effects on Gallium Nitride HEMTs Research Papers in Scopus Listed Journals Silvaco’s Simulation Standard 31 2021 silvaco.com/simulation-standard/tcad-investigation-of-total-ionizing-dose-tid-effects-on-gallium-nitride-hemts/
Impact of Heavy Ion Particle Strike Induced Single Event Transients on Conventional and π – Gate AlGaN/GaN HEMTs Research Papers in Scopus Listed Journals Semiconductor Science and Technology 1361-6641 36 2021 10.1088/1361-6641/abdba3/pdf
Optimization of π – Gate AlGaN/AlN/ GaN HEMTs for Low Noise and High Gain Applications Research Papers in Scopus Listed Journals Silicon 1876-9918 14 2020 10.1007/s12633-020-00805-7
TCAD Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-off Frequency & Breakdown Voltage Research Papers in UGC listed Journals IETE Technical Review 0974-5971 39 2020 10.1080/02564602.2020.1824624
Gate Stacked Dual-Gate MISHEMT with 39THz·V Johnson’s Figure of Merit for V-band applications Research Papers in Scopus Listed Journals Journal of Computational Electronics 1572-8137 20 2020 10.1007/s10825-020-01604-4
Assessment of Dual-Gate AlGaN/GaN MISHEMT for high temperature DC to DC converter Research Papers in Scopus Listed Journals Superlattices ad Microstructures 0749-6036 144 2020 10.1016/j.spmi.2020.106574
Sensitivity Assessment of RingFET Architecture for the Detection of Gas Molecules: Numerical Investigation Research Papers in Scopus Listed Journals IETE Technical Review 0256-4602 38 2020 10.1080/02564602.2020.1726830
TCAD-Based Assessment of Dual-Gate MISHEMT with Sapphire, SiC, and Silicon Substrate Research Papers in Scopus Listed Journals IETE Technical Review 0974-5971 38 2019 10.1080/02564602.2019.1699455
Temperature Based Analysis of 3-Step Field Plate AlGaN/GaN HEMT using Numerical Simulation Research Papers in Scopus Listed Journals Advances in Natural Sciences: Nanoscience and Nanotechnology 2043-6262 10 2019 10.1088/2043-6254/ab4803
Reconnoiter the leavening of Skin Deep Insulated Extension on Analog Performance of RingFET (SDIE-RingFET) Research Papers in Scopus Listed Journals AEU-Internation Journal of Electronics and Communication 1434-8411 83 2018 10.1016/j.aeue.2017.07.038
Study of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) Transistor Including Source Drain Depletion Length: Model for Sub-threshold Behaviour Research Papers in Scopus Listed Journals Superlattices and Microstructure 0749-6036 113 2018 10.1016/j.spmi.2017.09.049
Empirical Model for Nonuniformly Doped Symmetric Double-Gate Junctionless Transistor Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 65 2018 10.1109/TED.2017.2776607
Analytical Drain Current Model for Gate and Channel Engineered RingFET (GCE-RingFET) Research Papers in Scopus Listed Journals Superlattices and Microstructure 0749-6036 111 2017 10.1016/j.spmi.2017.08.006
Underlapped FinFET on insulator: Quasi3D analytical model Research Papers in Scopus Listed Journals Solid State Electronics 0038-1101 29 2017 10.1016/j.sse.2016.11.013
Sub-threshold Drain Current model of Double Gate RingFET (DG-RingFET) Architecture: An Analog and Linearity Performance Investigation for RFIC Design Research Papers in Scopus Listed Journals IETE Technical Review (TR) 0974-5971 35 2017 10.1080/02564602.2016.127017
Nanoscale T-shaped Double Gate DG MOSFET: Numerical Investigation for Analog/RF and Digital Performance Research Papers in Scopus Listed Journals , Superlattices and Microstructures 0749-6036 89 2016 10.1016/j.spmi.2015.10.046
Modeling and Simulation of Nanoscale Lateral Gaussian Doped Channel Asymmetric Double Gate MOSFET Research Papers in Peer Reviewed Journals Journal of NanoResearch 1661-9897 36 2016 10.4028/www.scientific.net/JNanoR.36.51
Theoretical Investigation of Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance Research Papers in UGC listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 67 2015 10.1109/TED.2015.2433951
Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 0018-9383 63 2015 10.1109/TED.2015.2493578
Modeling and Simulation of Double Gate Junctionless Transistor Considering Fringing Field Effects Research Papers in Scopus Listed Journals Solid State Electronics 0038-1101 107 2015 10.1016/j.sse.2015.01.020
Investigation of Electrostatic Integrity of Nanoscale Dual Material Gate Dielectric Pocket Silicon On Void (DMGDPSOV) MOSFET for Improved Device Scalability Research Papers in Scopus Listed Journals IEEE Trans. On Nanotechnology 1536-125X 13 2014 10.1109/TNANO.2014.2314146
Analytical Modeling of Dielectric Pocket Double Gate (DP-DG) MOSFET Incorporating Hot Carrier Induced Interface Charges Research Papers in Scopus Listed Journals IEEE Transactions on Device and Material Reliability 1530-4388 14 2014 10.1109/TDMR.2013.2278077
Comparative Study of Silicon On Nothing and III-V On Nothing Architecture for High Speed and Low Power Analog and RF/Digital Applications Research Papers in Scopus Listed Journals , IEEE Trans. On Nanotechnology 1536-125X 12 2013 10.1109/TNANO.2013.2276423
Performance Investigation of Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET for Low Voltage Digital Applications Research Papers in Scopus Listed Journals Journal of Semiconductor Technology and Science 1598-1657 13 2013 10.5573/JSTS.2013.13.6.622
Circuit Level Implementation for Insulated Shallow Extension silicon On Nothing (ISE-SON) MOSFET: A Novel Device architecture Research Papers in Scopus Listed Journals IETE Journal of Research (JR 0377-2063 59 2013 10.4103/03772063.2013.10876522
Analog and digital Performance Assessment of Empty Space in Double Gate (ESDG) MOSFET: A Novel Device Architecture Research Papers in Scopus Listed Journals Journal of Computational and Theoretical Nanoscience 1546-1955 10 2013 10.1166/jctn.2013.2710
Investigation of Empty Space in Nanoscale Double Gate (ESDG) MOSFET for High Speed Digital Circuit Applications Research Papers in Scopus Listed Journals Journal of Semiconductor Technology and Science 1598-1657 13 2013 10.5573/JSTS.2013.13.2.127
Two Dimensional analytical Drain Current Model for Double Gate MOSFET Incorporating Dielectric Pocket (DP-DG) Research Papers in Scopus Listed Journals IEEE Transactions On Electron Device (TED) 2567 - 2574 59 2012 10.1109/TED.2012.2206030
Simulation Study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for High Temperature applications Research Papers in Scopus Listed Journals Microelectronics Reliability (MER), 0026-2714 52 2012 10.1016/j.microrel.2011.10.022
Temperature Dependent Drain Current Model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET For Wide Operating Temperature Range Research Papers in Scopus Listed Journals Microelectronics Reliability (MER), 0026-2714 52 2012 https://www.sciencedirect.com/science/article/pii/S0026271411005543 10.1016/j.microrel.2011.12.021
Non-Journal Publications
Title of Publication Type of Publication Publisher Role ISBN Year Link to Publication Level
Impact of γ – Ray Irradiation on Π – Shaped Gate AlGaN/GaN HEMTs Full Paper in Conference Proceedings/Other Springer Co-Author 2025 (Accepted Only) International
Optical Sensitivity Modulation in Double-Gate MOSFETs through Dielectric Pocket Full Paper in Conference Proceedings/Other Springer Co-Author 2025 (Accepted Only) International
γ – Ray Induced Effects on COTS E – mode p – GaN AlGaN/GaN HEMTs Full Paper in Conference Proceedings/Other Springer Co-Author 2025 International
Investigating the SEU Vulnerability of InAlN/GaN HEMTs Under Harsh Radiation Environment Full Paper in Conference Proceedings/Other Springer Co-Author 2025 International
An Ensemble MLP-RF Model for the Prediction of DG-MOSFETs: Addressing Fabrication Process Variations Full Paper in Conference Proceedings/Other IEEE Co-Author 2025 International
Exploring Radiation Effect on GP-SOI MOSFET Performance and Reliability Full Paper in Conference Proceedings/Other IEEE Co-Author 2025 International
Enhancing Optical Sensitivity in DG-JL Transistor Through Gaussian Doping Technique Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2025 International
RF Performance Assessment of Emerging MOSFET Designs Chapters in Books John Wiley Author 2024 International
Comparative Investigation of Single and Double Channel AlGaN/GaN HEMTs for LNA Full Paper in Conference Proceedings/Other Springer Co-Author 2024 International
TCAD Based Reliability Assessment of Recess Gate AlGaN/GaN HEMT with Negative Gate Bias Induced Stress Full Paper in Conference Proceedings/Other IEEE Co-Author 2022 International
Degradation Mechanisms in a Proton Irradiated HEMT with 3DEG Conduction and 3DHG as a Back Barrier Full Paper in Conference Proceedings/Other IEEE Co-Author 2021 International
An Asymmetric π – Gate MOSHEMT Architecture for High Frequency Applications Full Paper in Conference Proceedings/Other Springer Co-Author 2021 International
Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer Full Paper in Conference Proceedings/Other Springer Co-Author 2021 International
Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias Induced Stress Full Paper in Conference Proceedings/Other Springer Co-Author 2021 International
Numerical Investigation of Gate Field Plate AlGaN/GaN HEMT with Multi- Recessed Buffer Full Paper in Conference Proceedings/Other Springer Co-Author 2021 International
TCAD Investigation of Gate – Lag Measurements on Conventional and π – Gate AlGaN/GaN HEMTs Full Paper in Conference Proceedings/Other IEEE Co-Author 2020 International
Reliability Comparison of Conventional & Two Finger AlGaN/GaN HEMT Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2020 International
Breakdown Voltage Analysis of Dual-Gate MISHEMT: TCAD based Assessment Full Paper in Conference Proceedings/Other IEEE Co-Author 2020 International
Comparison of Linearity and Intermodulation Distortion Metrics for T – and Pi – Gate HEMT Full Paper in Conference Proceedings/Other IEEE Co-Author 2020 International
Optimization of Asymmetric π Gate HEMT for Improved Reliability & Frequency Applications Full Paper in Conference Proceedings/Other IEEE Co-Author 2019 International
Breakdown Voltage Analysis of Different Field Plate AlGaN/GaN HEMTs : TCAD Based Assesment Full Paper in Conference Proceedings/Other IEEE Co-Author 2019 International
Optically Controlled Silicon On Nothing MOSFET-Numerical Simulation Full Paper in Conference Proceedings/Other Springer First/Principal/Corresponding author 2019 International
Study of Extended Back Gate Double Gate JunctionLess Transistor: Theoretical and Numerical Investigation Full Paper in Conference Proceedings/Other Springer First/Principal/Corresponding author 2019 International
Investigation of Field Plate Misalignment on Electrical Characteristics of AlGaN/ GaN HEMT Full Paper in Conference Proceedings/Other IEEE Co-Author 2019 International
Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study Full Paper in Conference Proceedings/Other Springer Co-Author 2019 International
Optimization of Gate Oxide of Dual-Gate MISHEMTs for Enhanced DC performance Full Paper in Conference Proceedings/Other IEEE Co-Author 2019 International
Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective Chapters in Books Springer Author 978-981-10-7470-7 2017 International
Investigation of channel material engineering by using III-V compound semiconductor for RingFET architecture Full Paper in Conference Proceedings/Other IEEE Co-Author 2016 International
Charge Based Modeling of channel Material Engineered P-type Double Gate MOSFET Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2015 International
TCAD Assessment of Dual Material Gate Nanoscale RingFET (DMG-RingFET) for Analog and Digital Applications Full Paper in Conference Proceedings/Other IEEE Co-Author 2014 International
Temperature Dependent Model for Dielectric Pocket Double Gate (DPDG) MOSFET: A Novel Device Architecture Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2013 International
Laterally Asymmetric Channel Insulated Shallow Extension Silicon On Nothing LAC-ISE-SON MOSFET for Improved Reliability and Digital Circuit simulations Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2012 International
Simulation Study of Gate Stacked Insulated Shallow Extension Silicon On Nothing ISE-SON MOSFET for RFICs design Full Paper in Conference Proceedings/Other IEEE First/Principal/Corresponding author 2011 International
Research Projects
Project Title Project Type Year Of Sanction Outcome/Output Duration
Empowering Students through Upskilling in Semiconductor Device Design, Innovation, and Simulation using Machine Learning 2024 01-11-2024 To 31-03-2026 (1 years, 4 months, 30 days)
Talk Poster Presented
Name of the Activity Role Date of Activity
Resource Person 23-01-2021
Resource Person 30-10-2023
Resource Person 27-03-2025
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